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NTMFS4839N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 30 A
T J = 25 ° C
T J = 125 ° C
0.9
0.8
1.2
V
Reverse Recovery Time
t RR
22.2
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 V, dIS/dt = 100 A/ m s,
I S = 30 A
12.5
9.7
10.8
ns
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.93
nH
Drain Inductance
Gate Inductance
Gate Resistance
L D
L G
R G
T A = 25 ° C
0.005
1.84
3.3
nH
nH
W
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
90
80
70
60
4.6 V
6.0 V
4.4 V
4.2 V
4.0 V
T J = 25 ° C
90
80
70
60
50
40
50
40
30
20
3.5 V
30
20
T C = 25 ° C
10
0
V GS = 3.0 V
10
0
T C = 125 ° C
T C = ? 55 ° C
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
0.012
V DS , DRAIN ? TO ? SOURCE VOLTAGE (V)
Figure 1. On ? Region Characteristics
0.01
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.01
I D = 30 A
T J = 25 ° C
0.009
0.008
V GS = 4.5 V
0.007
0.008
0.006
0.006
0.005
0.004
0.003
0.002
V GS = 11.5 V
0.004
2.5
3.5
4.5
5.5
6.5
7.5
8.5
9.5
10.5 11.5
0.001
10
15
20
25
30
35
40
V GS , GATE ? TO ? SOURCE VOLTAGE (V)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
I D , DRAIN CURRENT (A)
Figure 4. On ? Resistance versus Drain Current
and Temperature
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